By James C. Daly, Denis P. Galipeau
Built-in circuits (ICs) don't continuously paintings the 1st time. many stuff can and do get it wrong in analog circuit designs. there are various universal error that regularly require expensive chip redecorate and refabrication, all of that are kept away from whilst designers are conscious of the pitfalls. to gain good fortune, IC designers desire a entire toolbox-a toolbox crammed not just with a fantastic history in electronics, layout recommendations and research abilities, but additionally with the main important device of all: adventure.
Analog BiCMOS layout deals IC layout engineers the training akin to many years of useful adventure. Culled from the careers of training engineers, it provides the simplest equipment and the pitfalls most often encountered within the layout of biCMOS built-in circuits. obtainable to a person who has taken a direction in electronics, this e-book covers the fundamental layout of bandgap voltage references, present mirrors, amplifiers, and comparators. It studies universal layout mistakes frequently missed and provides layout options used to treatment these problems.
With its whole insurance of uncomplicated circuit development blocks, complete information of universal layout pitfalls, and a compendium of layout and structure difficulties and options, Analog BiCMOS layout is the precise reference for IC designers and engineers, fledgling and skilled alike. learn it to enhance your historical past, browse it for concepts on averting pitfalls, and for those who run right into a challenge, use it to discover a solution.
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Additional info for Analog BiCMOS Design: Practices and Pitfalls
Modeling is a tradeoﬀ between accuracy and utility. Exact models tend to be more complex than approximate ones. The model to use is the simplist one that provides the required accuracy. Models for hand calculation, where computational power is limited, should be simple. Even with high speed computers, complex models can make the simulations of large systems prohibitive. 1 Bipolar Transistors Early Eﬀect Increasing the voltage across the transistor VCE results in an increase in transistor current IC .
7] the width of the depletion region. No buried layer is present because it would short out the epiFET. In a typical conﬁguration three regions, the gate, isolation well and the substrate are connected to the negative supply. As the epi becomes more positive, the depletion regions from all three regions extend into the epi reducing the cross-section for current ﬂow. 10 Chapter Exercises 1. Calculate the resistivity of silicon doped with 5x1018 phosphorus(group 5) atoms per cubic centimeter. Assume total ionization.
The powerful methods of linear circuit theory allow the response of a circuit to small signals to be determined. Since small signal circuit parameters depend on the DC operating point, the ﬁrst step in an analysis is to determine the DC currents and voltages. 1 Bipolar Small Signal Model A simple small signal model for a bipolar transistor can be found using the exponential dependence of collector current on base-emitter voltage in the normal operating range. 6 Simple small signal model for a bipolar transistor.
Analog BiCMOS Design: Practices and Pitfalls by James C. Daly, Denis P. Galipeau